Opportunity Information: Apply for DE FOA 0002998
The Department of Energy's Advanced Research Projects Agency-Energy (ARPA-E) grant opportunity titled Unlocking Lasting Transformative Resiliency Advances by Faster Actuation of Power Semiconductor Technologies (ULTRAFAST), FOA number DE-FOA-0002998, is aimed at pushing power semiconductor devices and power modules to operate and respond far faster than what is common today, with the end goal of improving resilience, reliability, and controllability across the electric grid and other high-power electrical systems. The basic motivation is that power electronics have become the dominant interface for modern energy systems, enabling renewables, electrified transportation, and efficient power conversion, but this shift also changes grid dynamics. As more of the grid is mediated by fast electronic interfaces rather than slower rotating machines, stability and reliability challenges become harder, and traditional protection and control approaches can fall short. ULTRAFAST is intended to create technology leaps that let the grid sense, decide, and actuate power flow and protection actions much more quickly and robustly, including under faults and rapidly changing conditions.
ARPA-E frames this program around its broader mission: funding applied research and development that is high-risk, high-reward, and capable of creating new "learning curves" rather than incremental improvements along established roadmaps. In practical terms, the program is not looking for routine device optimization; it is looking for disruptive advances in materials, device structures, module architectures, and actuation methods that would unlock new levels of performance and, if successful, plausibly scale toward competitive manufacturing and widespread deployment. While the grid is a central focus, ARPA-E explicitly calls out that the same breakthroughs could benefit other complex power distribution environments that already depend on dense networks of converters, such as electric vehicles, ships, aircraft (including all-electric aviation concepts), data centers, and electrified buildings.
Technically, ULTRAFAST targets improvements across silicon (Si), wide bandgap (WBG), and ultra-wide bandgap (UWBG) semiconductor technologies, paired with significantly improved actuation or triggering methods. The emphasis is on semiconductor device and module-level advances that enable faster switching and/or faster triggering at higher current and higher voltage. This matters because faster actuation can improve both normal operation (tighter, higher-bandwidth control of power converters) and abnormal operation (ultra-fast protective actions during faults), which directly ties to resilience and reliability. At the same time, the FOA recognizes that pushing switching speed and slew rates upward can create real system-level constraints, especially electromagnetic interference (EMI), so proposed solutions are expected to confront those practical integration issues rather than ignoring them.
The FOA describes three main technical categories of interest. Category 1 focuses on protection-oriented device and/or module technologies that can perform bypass, shunt, or interrupt functions at high current and voltage with extremely fast reaction times, on the order of nanoseconds, and with as low a level of integration as possible. The idea is to enable protection actions that happen fast enough to limit damage, prevent cascading failures, and improve survivability of critical equipment, potentially redefining how protection is implemented at power-electronic interfaces. Category 2 focuses on devices and/or modules that support efficient, high-power, high-speed power conversion by operating at higher switching frequencies, generally in the range of 1 kHz to 100 kHz depending on power level, in order to increase the large-signal bandwidth of converters used in grid applications. This is tied to better dynamic control of power flow and improved grid support functions. Category 3 includes complementary enabling technologies that make the first two categories viable in real hardware, such as wireless sensing of voltage and current, high-density packaging approaches that integrate wireless actuation and device/module-level protection, power-cell-level passive components like capacitors and inductors suited to high-speed operation, and thermal management strategies capable of handling the heat flux and transient conditions associated with ultra-fast switching and protection events.
From a funding and administrative standpoint, this is a discretionary DOE opportunity administered by ARPA-E, with funding instruments including cooperative agreements, grants, and potentially other mechanisms depending on the project. The opportunity is open to a broad set of eligible applicants (unrestricted, subject to any clarifications in the FOA). The Grants.gov listing notes an award ceiling of $1,000,000 and an expectation of around 20 awards (as posted in the source summary). The original posting indicates a creation date of February 24, 2023 and an original closing date of March 28, 2023, which is important for anyone looking at this historically or trying to track whether a related follow-on or reopened solicitation exists.
The application process is also very specific: applicants are expected to obtain the full FOA from the ARPA-E FOA site and submit application materials through ARPA-E eXCHANGE, not through email or other submission paths. ARPA-E states it will not review or consider concept papers submitted by other means. The announcement provides support channels for technical issues with eXCHANGE (ExchangeHelp@hq.doe.gov) and a contracting officer email for FOA questions not covered by the FAQ (ARPA-E-CO@hq.doe.gov), with the instruction to include the FOA name and number in the subject line. Overall, ULTRAFAST is positioned as a focused push to make power semiconductor devices and their supporting module and sensing ecosystems respond dramatically faster, enabling better grid control and protection in a future where power electronics are everywhere and system stability increasingly depends on how quickly those interfaces can safely and intelligently act.Apply for DE FOA 0002998
- The Department of Energy, Advanced Research Projects Agency Energy in the opportunity zone benefits, science and technology and other research and development sector is offering a public funding opportunity titled "UNLOCKING LASTING TRANSFORMATIVE RESILIENCY ADVANCES BY FASTER ACTUATION OF POWER SEMICONDUCTOR TECHNOLOGIES (ULTRAFAST)" and is now available to receive applicants.
- Interested and eligible applicants and submit their applications by referencing the CFDA number(s): 81.135.
- This funding opportunity was created on Feb 24, 2023.
- Applicants must submit their applications by Mar 28, 2023. (Agency may still review applications by suitable applicants for the remaining/unused allocated funding in 2026.)
- Each selected applicant is eligible to receive up to $1,000,000.00 in funding.
- The number of recipients for this funding is limited to 20 candidate(s).
- Eligible applicants include: Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled Additional Information on Eligibility.
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ULTRAFAST (DE-FOA-0002998) Grant Opportunity FAQs
What is the ULTRAFAST funding opportunity?
ULTRAFAST stands for Unlocking Lasting Transformative Resiliency Advances by Faster Actuation of Power Semiconductor Technologies. It is a Department of Energy opportunity administered by ARPA-E, focused on pushing power semiconductor devices and power modules to operate and respond far faster than what is common today to improve resilience, reliability, and controllability in the electric grid and other high-power electrical systems.
Who is sponsoring and administering this opportunity?
The sponsor is the U.S. Department of Energy (DOE). The program is administered through DOE's Advanced Research Projects Agency-Energy (ARPA-E).
What is the FOA number for ULTRAFAST?
The Funding Opportunity Announcement (FOA) number is DE-FOA-0002998.
What problem is ULTRAFAST trying to solve?
The program is responding to the reality that power electronics have become the dominant interface for modern energy systems (including renewables integration, electrified transportation, and efficient power conversion). As more grid behavior is mediated by fast electronic interfaces rather than slower rotating machines, stability and reliability challenges can become harder and traditional protection and control methods can fall short. ULTRAFAST aims to enable the grid (and similar systems) to sense, decide, and actuate power flow and protection actions much more quickly and robustly, including during faults and rapidly changing conditions.
What outcomes is ARPA-E aiming for?
ARPA-E is aiming for high-risk, high-reward applied R&D that can create technology leaps rather than incremental improvements. ULTRAFAST is intended to unlock disruptive advances in materials, device structures, module architectures, and actuation/triggering methods, with an emphasis on breakthroughs that could plausibly scale toward competitive manufacturing and broad deployment if successful.
Is ULTRAFAST focused only on the electric grid?
No. While the electric grid is a central focus, ARPA-E explicitly notes that breakthroughs could also benefit other complex power distribution environments that depend on dense networks of converters, such as electric vehicles, ships, aircraft (including all-electric aviation concepts), data centers, and electrified buildings.
What types of semiconductor technologies are in scope?
The FOA targets improvements across silicon (Si), wide bandgap (WBG), and ultra-wide bandgap (UWBG) semiconductor technologies, paired with significantly improved actuation or triggering methods.
What does "faster actuation" mean in the context of this program?
In ULTRAFAST, faster actuation refers to semiconductor device and module-level advances that enable faster switching and/or faster triggering at higher current and higher voltage. Faster actuation is tied to improved normal operation (higher-bandwidth converter control) and improved abnormal operation (ultra-fast protective actions during faults).
Why does switching/triggering speed matter for resilience and reliability?
Faster switching and triggering can allow tighter, higher-bandwidth control of power converters and enable protective actions that occur quickly enough to limit damage, prevent cascading failures, and improve survivability of critical equipment, especially during fault conditions.
Does the FOA address electromagnetic interference (EMI) concerns?
Yes. The FOA recognizes that increasing switching speeds and slew rates can create system-level constraints, particularly electromagnetic interference (EMI). Proposed solutions are expected to address practical integration issues like EMI rather than ignoring them.
What are the main technical categories in ULTRAFAST?
The FOA describes three main categories: (1) protection-oriented device/module technologies for ultra-fast bypass, shunt, or interrupt functions; (2) devices/modules enabling efficient high-power, high-speed power conversion at higher switching frequencies; and (3) complementary enabling technologies that make Categories 1 and 2 viable in real hardware, such as sensing, packaging, passives, and thermal management.
What is Category 1 focused on?
Category 1 focuses on protection-oriented device and/or module technologies that can perform bypass, shunt, or interrupt functions at high current and voltage with extremely fast reaction times (on the order of nanoseconds), and with as low a level of integration as possible. The intent is to enable protection actions fast enough to limit damage and reduce the risk of cascading failures.
How fast is "extremely fast" for Category 1?
The FOA describes reaction times on the order of nanoseconds for Category 1 protection-oriented technologies.
What is Category 2 focused on?
Category 2 focuses on devices and/or modules that support efficient, high-power, high-speed power conversion by operating at higher switching frequencies, generally in the range of 1 kHz to 100 kHz (depending on power level). This is intended to increase the large-signal bandwidth of converters used in grid applications and improve dynamic control of power flow and grid support functions.
What switching frequency range is referenced for Category 2?
The FOA references switching frequencies generally in the 1 kHz to 100 kHz range, depending on power level.
What is Category 3 focused on?
Category 3 includes complementary enabling technologies that support the viability of Categories 1 and 2 in real hardware. Examples called out include wireless sensing of voltage and current, high-density packaging that integrates wireless actuation and device/module-level protection, power-cell-level passive components (capacitors and inductors) suited to high-speed operation, and thermal management strategies designed for high heat flux and transient conditions associated with ultra-fast switching and protection events.
What kinds of projects are not the main target of ULTRAFAST?
Based on ARPA-E's framing, the program is not looking for routine device optimization or incremental improvements along established roadmaps. It is intended for disruptive advances that could establish new performance trajectories.
What funding instruments may be used under this opportunity?
The opportunity is discretionary and may use cooperative agreements, grants, and potentially other mechanisms depending on the project.
Who is eligible to apply?
The opportunity is described as open to a broad set of eligible applicants (unrestricted), subject to any clarifications in the full FOA.
What is the award ceiling listed in the Grants.gov summary?
The Grants.gov listing notes an award ceiling of $1,000,000 (as shown in the provided opportunity summary).
How many awards were anticipated in the posting summary?
The source summary indicates an expectation of around 20 awards (as posted in the Grants.gov summary information provided).
When was the opportunity originally posted and when did it originally close?
The original posting indicates a creation date of February 24, 2023 and an original closing date of March 28, 2023.
Where do applicants get the full FOA details?
Applicants are expected to obtain the full FOA from the ARPA-E FOA site.
How must applications be submitted?
Application materials must be submitted through ARPA-E eXCHANGE. The program states it will not review or consider concept papers submitted by other means (for example, email or other submission paths).
Can an application or concept paper be submitted by email?
No. The announcement indicates that submissions must go through ARPA-E eXCHANGE and that ARPA-E will not review or consider concept papers submitted by other means.
What support is available for technical issues with ARPA-E eXCHANGE?
For technical issues with eXCHANGE, the announcement provides: ExchangeHelp@hq.doe.gov.
Who should be contacted for FOA questions not covered by the FAQ?
The contracting officer email provided is ARPA-E-CO@hq.doe.gov, with instructions to include the FOA name and number in the subject line.
What should be included in the subject line when emailing about this FOA?
The announcement instructs applicants to include the FOA name and FOA number in the subject line when contacting ARPA-E-CO@hq.doe.gov.
What is the core technical emphasis across the program?
The core technical emphasis is on semiconductor device and module-level advances (across Si, WBG, and UWBG) combined with improved actuation/triggering methods to enable faster switching/triggering at higher current and voltage, with practical attention to system integration constraints like EMI.
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| Revolutionizing Ore to Steel to Impact Emissions (ROSIE) SBIR/STTR Apply for DE FOA 0003118 Funding Number: DE FOA 0003118 Agency: Department of Energy, Advanced Research Projects Agency Energy Category: Opportunity Zone Benefits, Science and Technology and other Research and Development Funding Amount: $4,241,580 |
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